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Rhenium atoms perfectly incorporated into MoS? matrix. These alloys are not phase separated meaning Mo and Re atoms randomly distributed throughout the crystals. Re composition varies from slim amount

硫鹽礦物晶體 Pb3Sn4FeSb2S14(Lead Tin Ferrum Antimony Sulfide) 晶體結構：六邊形 類型：合成 尺寸：~8mm 純度：99.995% 屬性：超導體

Single crystal highly oriented -synthetic- molybdenum disulfide (2H-MoS?) comes in bulk. Synthetic MoS? is developed in our laboratories and is superior to the naturally occurring single crystal MoS?.

晶體尺寸：10毫米 電學性能：半導體 晶體結構：斜方晶系 晶胞參數(shù)：a = 0.4025nm，B = 1.117nm，C = 1.135nm，α=β=γ= 9 晶體類型：合成 晶體純度：＞99.995% 表征方法：XRD，拉曼，EDX，霍爾測量

二硫化鈮晶體 2H-NbS2(Niobium Disulfide) 晶體尺寸：2毫米 電學性能：金屬，superconductor (Tc~6K), charge density waves (CDW) system. 晶體結構：六邊形 晶胞參數(shù)：a = b = 0.332 nm, c = 1.197 nm, α = β = 90, γ = 120° 晶體類型：合成 晶體純度：＞99.995%

三硫化鈮晶體（99.995%） NbS3 晶體類型：合成 晶體純度：＞99.995% 低維材料最新層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2 具體請咨詢在線客服